features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 300 v v ce o collector-emitter voltage v v eb o emitter-base voltage 5 v i c co llector current p c co llector power dissipation 350 mw r j a thermal resistance from junction to ambient 357 /w t j jun ction temperature 150 t st g storage temperature -55 +150 electrical characteristics (ta =25 unless otherwise specified 1d sot -23 plastic-encap sulate transistors transistor( np n ) 500 ma e b c cbo mmbta4 2 300 high breakdown voltage low collector-emitter saturation voltage complementary to mmbta92 (pnp) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.25 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 10v, i c = 1ma 60 h fe(2) v ce = 10v, i c =10ma 100 200 dc current gain h fe(3) v ce =10v, i c =30ma 60 collector-emitter saturation voltage v ce (sat) i c =20ma, i b = 2ma 0.2 v base-emitter saturation voltage v be (sat) i c = 20ma, i b =2ma 0.9 v transition frequency f t v ce = 20v, i c = 10ma, f= 30mhz 50 mhz
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